Investigating transverse Hall voltages using two-terminal setups

In this paper, we present a method to numerically study transverse Hall voltages using an alternative quantity in two-terminal setups. Using nonlinear transport concepts, we find that the Hall voltage dependence on the model parameters can be investigated from the difference between the injectivitie...

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Bibliographic Details
Published in:Physical review. B 2018-09, Vol.98 (11), p.115404, Article 115404
Main Authors: Lima, Leandro R. F., Hernández, Alexis R.
Format: Article
Language:English
Subjects:
Adatoms
Dependence
Finite difference method
Graphene
Green's functions
Quantum Hall effect
Scattering
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Summary:In this paper, we present a method to numerically study transverse Hall voltages using an alternative quantity in two-terminal setups. Using nonlinear transport concepts, we find that the Hall voltage dependence on the model parameters can be investigated from the difference between the injectivities of each terminal. The method is suitable to work with nonequilibrium Green's functions as well as for scattering matrix approaches. We illustrate the proposed idea by studying the quantum spin Hall effect in graphene with disordered spin-orbit scattering centers induced by adatoms. We use two distinct models: a finite-difference implementation of the Dirac Hamiltonian and a tight-binding Hamiltonian combined with the scattering matrix approach and the nonequilibrium Green's functions approach, respectively.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.98.115404