Bulk and domain-wall effects in ferroelectric photovoltaics

We investigate the photovoltaic (PV) effects in ferroelectrics based on the polar structure in domains and the intrinsic symmetry breaking of ferroelastic domain walls (DWs). A comprehensive analysis for BiFeO3 films with the single-domain and 71° domain structures reveals a major contribution of th...

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Bibliographic Details
Published in:Physical review. B 2016-12, Vol.94 (21), Article 214111
Main Authors: Matsuo, Hiroki, Kitanaka, Yuuki, Inoue, Ryotaro, Noguchi, Yuji, Miyayama, Masaru, Kiguchi, Takanori, Konno, Toyohiko J.
Format: Article
Language:English
Subjects:
Bismuth compounds
Broken symmetry
Domain walls
Ferroelectric materials
Ferroelectricity
Photovoltages
Photovoltaic cells
Solar cells
Wall effects
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Summary:We investigate the photovoltaic (PV) effects in ferroelectrics based on the polar structure in domains and the intrinsic symmetry breaking of ferroelastic domain walls (DWs). A comprehensive analysis for BiFeO3 films with the single-domain and 71° domain structures reveals a major contribution of the DWs superimposed on the bulk PV effect, which can explain the enhanced PV response in the multidomain film exhibiting photovoltages greater than the band gap. Our methodology can reveal the contributions of the bulk PV and the DW-PV effects quantitatively and uncover a design strategy for enhancing ferroelectric photovoltaics.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.94.214111