Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures

In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were dec...

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Bibliographic Details
Published in:Journal of electronic materials 2019-01, Vol.48 (1), p.571-582
Main Authors: Vaghayenegar, M., Doyle, K. J., Trivedi, S., Wijewarnasuriya, P., Smith, David J.
Format: Article
Language:English
Subjects:
Burgers vector
Characterization and Evaluation of Materials
Chemical etching
Chemistry and Materials Science
Defects
Dislocations
Electronics and Microelectronics
Electrons
Epitaxial growth
Etch pits
Etchants
Heterostructures
Hydrochloric acid
Image analysis
Image resolution
Instrumentation
Lactic acid
Materials Science
Molecular beam epitaxy
Nitric acid
Optical and Electronic Materials
Organic chemistry
Solid State Physics
Stacking faults
Transmission electron microscopy
Zinc tellurides
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Summary:In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with a 3 1 ¯ 11 Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-018-6737-0