The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping l...

Full description

Saved in:
Bibliographic Details
Published in:AIP advances 2016-03, Vol.6 (3), p.035124-035124-9
Main Authors: Chen, P., Zhao, D. G., Jiang, D. S., Zhu, J. J., Liu, Z. S., Yang, J., Li, X., Le, L. C., He, X. G., Liu, W., Li, X. J., Liang, F., Zhang, B. S., Yang, H., Zhang, Y. T., Du, G. T.
Format: Article
Language:English
Subjects:
ABSORPTION
ALUMINIUM COMPOUNDS
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPLETION LAYER
DESIGN
DOPED MATERIALS
Doping
ELECTRONIC STRUCTURE
ELECTRONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
Indium gallium nitrides
INTERFACES
Interlayers
Lasers
LOSSES
Matching
NITROGEN COMPOUNDS
QUANTUM WELLS
SEMICONDUCTOR LASERS
THICKNESS
VISIBLE RADIATION
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4945015