Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures

We demonstrate charge modulation of over 1014 cm−2 electrons in a two-dimensional electron gas formed in SrTiO3/GdTiO3 inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO3 cap layers...

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Bibliographic Details
Published in:Applied physics letters 2014-05, Vol.104 (18)
Main Authors: Boucherit, M., Shoron, O., Jackson, C. A., Cain, T. A., Buffon, M. L. C., Polchinski, C., Stemmer, S., Rajan, S.
Format: Article
Language:English
Subjects:
Applied physics
Electron gas
Electrons
Field effect transistors
Heterostructures
Modulation
Semiconductor devices
Strontium titanates
Transistors
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Summary:We demonstrate charge modulation of over 1014 cm−2 electrons in a two-dimensional electron gas formed in SrTiO3/GdTiO3 inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO3 cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO3 impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 1014 cm−2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4875796