Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth

In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited...

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Bibliographic Details
Published in:AIP advances 2014-05, Vol.4 (5), p.p023115-057111-6
Main Authors: Dedi, Chien, Chia-Hua, Hsiung, Te-Chih, Chen, Yu-Chieh, Huang, Yi-Cheng, Lee, Ping-Chung, Lee, Chih-Hao, Chen, Yang-Yuan
Format: Article
Language:English
Subjects:
ELECTRON DIFFRACTION
Electron transport
Intermetallic compounds
LEAD TELLURIDES
MAGNETORESISTANCE
Magnetoresistivity
MATERIALS SCIENCE
MONOCRYSTALS
NANOSCIENCE AND NANOTECHNOLOGY
Nanowires
QUANTUM WIRES
STRESSES
Tellurides
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Summary:In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m−1 at 300 K is much higher than σ [0.44–1526 S m−1, Chen et al. , Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al. , Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4876919