Intersubband transitions in InxGa1−xN/InyGa1−yN/GaN staggered quantum wells

Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-cons...

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Bibliographic Details
Published in:Journal of applied physics 2014-04, Vol.115 (16)
Main Authors: Hasan, Yıldırım, Aslan Bulent
Format: Article
Language:English
Subjects:
Absorption
Applied physics
Dependence
Depolarization
Gallium nitrides
Intersubband transitions
Mathematical analysis
Parameters
Quantum wells
Surface charge
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Summary:Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4872251