Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode

An electrically pumped nitrogen doped p-type ZnO nanowires/undoped n-type ZnO thin film homojunction random laser with a 10-period SiO2/SiNx distributed Bragg reflector is demonstrated. The formation of p-n homojunction is confirmed by the current-voltage and photocurrent characteristics. The random...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (13)
Main Authors: Huang, Jian, Monzur Morshed, Muhammad, Zuo, Zheng, Liu, Jianlin
Format: Article
Language:English
Subjects:
Applied physics
Homojunctions
Nanowires
Photoelectric effect
Photoelectric emission
Semiconductor lasers
Silicon dioxide
Thin films
Zinc oxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An electrically pumped nitrogen doped p-type ZnO nanowires/undoped n-type ZnO thin film homojunction random laser with a 10-period SiO2/SiNx distributed Bragg reflector is demonstrated. The formation of p-n homojunction is confirmed by the current-voltage and photocurrent characteristics. The random lasing behaviors with a low threshold of around 3 mA are observed. The output power is measured to be 220 nW at a drive current of 16 mA.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4870513