Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding...

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Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (10)
Main Authors: Liu, Kuan-Hsien, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Hsieh, Tien-Yu, Chen, Min-Chen, Yeh, Bo-Liang, Chou, Wu-Ching
Format: Article
Language:English
Subjects:
Applied physics
Bias
CAD
Computer aided design
Computer simulation
Degradation
Hydrogen ions
Hydrolysis
Indium gallium zinc oxide
Partial pressure
Semiconductor devices
Surface stability
Thin film transistors
Transistors
Zinc oxide
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Summary:This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863682