CdCl2 treatment related diffusion phenomena in Cd1−xZnxS/CdTe solar cells

Utilisation of wide bandgap Cd1−xZnxS alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd1−xZnxS through device fabricatio...

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Bibliographic Details
Published in:Journal of applied physics 2014-03, Vol.115 (10)
Main Authors: Kartopu, G., Taylor, A. A., Clayton, A. J., Barrioz, V., Lamb, D. A., Irvine, S. J. C.
Format: Article
Language:English
Subjects:
Activation
Aluminosilicates
Aluminum silicates
Annealing
Applied physics
Bilayers
Cadmium
Cadmium chloride
Cadmium sulfide
Cadmium tellurides
Depth profiling
Diffusion layers
Organic chemistry
Photovoltaic cells
Scanning electron microscopy
Scanning transmission electron microscopy
Solar cells
Substrates
Thin films
Transmission electron microscopy
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Summary:Utilisation of wide bandgap Cd1−xZnxS alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd1−xZnxS through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl2 activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd1−xZnxS/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completion—fully processed (CdCl2 activated), annealed only (without CdCl2 activation), and a control (without CdCl2 activation or anneal)—revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl2 treatment. As a result, the initial Cd1−xZnxS/CdS bilayer structure was observed to unify into a single Cd1−xZnxS layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd1−xZnxS/CdTe device.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4868224