Effects of interface state density on 4H-SiC n-channel field-effect mobility

We investigated the effects of DIT at the interface between SiO2 and Si-, C-, and a-face 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. DIT at EC − ET = 0.2 eV was evaluated by the C − ψS...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-02, Vol.104 (8), p.83516
Main Authors: Yoshioka Hironori, Senzaki Junji, Shimozato Atsushi, Tanaka, Yasunori, Okumura Hajime
Format: Article
Language:English
Subjects:
Applied physics
Field effect transistors
MOSFETs
Semiconductor devices
Silicon carbide
Silicon dioxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the effects of DIT at the interface between SiO2 and Si-, C-, and a-face 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. DIT at EC − ET = 0.2 eV was evaluated by the C − ψS method using MOS capacitors and was accurately reflected in the subthreshold slope of the MOSFETs. The peak field-effect mobility was inversely proportional to DIT. The mobility for the a-face MOSFETs was 1.5 times or more higher than the other faces mobilities, indicating that mobility limiting factors other than DIT(0.2 eV) may exist for the Si- and C-face interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4866790