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Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths

We present data of the coefficient of band-to-band absorption of crystalline silicon at 295 K in the wavelength range from 950 to 1350 nm and analyze its uncertainty. The data is obtained from measurements of reflectance and transmittance as well as spectrally resolved photoluminescence measurements...

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Published in:Applied physics letters 2014-02, Vol.104 (8), p.81915
Main Authors: Schinke, Carsten, Bothe, Karsten, Christian Peest, Peter, Schmidt, Jan, Brendel, Rolf
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Christian Peest, Peter
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description We present data of the coefficient of band-to-band absorption of crystalline silicon at 295 K in the wavelength range from 950 to 1350 nm and analyze its uncertainty. The data is obtained from measurements of reflectance and transmittance as well as spectrally resolved photoluminescence measurements and spectral response measurements. A rigorous measurement uncertainty analysis based on an extensive characterization of our setups is carried out. We determine relative uncertainties of 4% at 1000 nm, increasing to 22% at 1200 nm and 160% at 1300 nm, and show that all methods yield comparable results.
doi_str_mv 10.1063/1.4866916
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
subjects Absorption
Applied physics
Crystal structure
Crystallinity
Near infrared radiation
Photoluminescence
Reflectance
Silicon
Spectral sensitivity
Uncertainty analysis
title Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths
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