Non-volatile, electric control of magnetism in Mn-substituted ZnO

We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandw...

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Bibliographic Details
Published in:Applied physics letters 2014-02, Vol.104 (6)
Main Authors: Wang, X. L., Shao, Q., Leung, C. W., Lortz, R., Ruotolo, A.
Format: Article
Language:English
Subjects:
Applied physics
Electric control
Ferromagnetism
Magnetic moments
Magnetic properties
Magnetism
Manganese
Substitutes
Switching
Zinc oxide
Zinc oxides
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Summary:We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4865428