Ultrafast photoconductivity of crystalline, polycrystalline, and nanocomposite ZnSe material systems for terahertz applications

Ultrafast photoconductivity is studied for crystalline (bulk), polycrystalline (microstructure), and nanocomposite (nanostructure) ZnSe material systems. Spectral transmission analyses show a pronounced red-shift of the absorption edge for only the nanocomposite ZnSe (being comprised of 500 nm nanop...

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Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (4)
Main Authors: Collier, C. M., Holzman, J. F.
Format: Article
Language:English
Subjects:
Applied physics
Crystal structure
Crystallinity
Current carriers
Dielectric breakdown
Nanocomposites
Nanoparticles
Photoconductivity
Polycrystals
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Summary:Ultrafast photoconductivity is studied for crystalline (bulk), polycrystalline (microstructure), and nanocomposite (nanostructure) ZnSe material systems. Spectral transmission analyses show a pronounced red-shift of the absorption edge for only the nanocomposite ZnSe (being comprised of 500 nm nanoparticles in a polymer host). Ultrafast transient analyses show respective 6 ns, 1.5 ns, and 95 ps charge-carrier lifetimes for the respective material systems. The results are interpreted with a diffusion-recombination model, showing distinct regimes for bulk diffusion and surface recombination. Nanocomposite ZnSe is shown to be particularly advantageous for terahertz applications seeking ultrafast photoconductivity with high dielectric breakdown strengths and ultrashort charge-carrier lifetimes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863217