Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

We report an investigation of in situ SiNx gate dielectric grown on AlN/GaN heterostructures by metal-organic chemical vapor deposition. It is revealed that the in situ SiNx is Si-rich, with a N/Si ratio of 1.21 and a relatively high effective dielectric constant of ∼8.3. The 7 nm in situ SiNx film...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (3)
Main Authors: Lu, Xing, Ma, Jun, Jiang, Huaxing, May Lau, Kei
Format: Article
Language:English
Subjects:
Aluminum nitride
Applied physics
Chemical vapor deposition
Gallium nitrides
Heterostructures
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Resistance
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report an investigation of in situ SiNx gate dielectric grown on AlN/GaN heterostructures by metal-organic chemical vapor deposition. It is revealed that the in situ SiNx is Si-rich, with a N/Si ratio of 1.21 and a relatively high effective dielectric constant of ∼8.3. The 7 nm in situ SiNx film exhibited a large resistivity of >1014 Ω · cm and a breakdown field of 5.7 MV/cm. Furthermore, interface trapping effects in the in situ SiNx/AlN/GaN heterostructures were investigated by frequency dependent conductance analysis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4862664