Hopping conduction in amorphous silicon-chromium films at very low temperature

In the reference [J. Phys. C: Solid State Phys., 16 (1983) 6491-6498], Mobiüs et al. studied the low temperature transport in amorphous Si1−xCrx films. They have shown that for the conductivity smaller than 270± 50 Ω−1cm−1, the transport should be described by one conduction mechanism which is therm...

Full description

Saved in:
Bibliographic Details
Main Authors: Errai, M, El, Kaaouachi A, El, Idrissi H, Zatni, A, Narjis, A, Dlimi, S, Sybous, A, Limouny, L, Daoudi, E
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Chromium
Hopping conduction
Transport
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the reference [J. Phys. C: Solid State Phys., 16 (1983) 6491-6498], Mobiüs et al. studied the low temperature transport in amorphous Si1−xCrx films. They have shown that for the conductivity smaller than 270± 50 Ω−1cm−1, the transport should be described by one conduction mechanism which is thermally activated. Here we focus on films where x=9.2, 9.6, 10.2, 11.4, 12.1 and 13.1%. The conductivity is best described by the relation σ = σ0exp[−(T0/T)p] with p≈1/2. This behavior can be explained by the Efros-Shklovskii Variable Range Hopping (VRH) model where the transport occurs by hopping between localized states in the vicinity of the Fermi level, EF, with the creation of the Coulomb Gap. On the contrary, no Mott VRH is observed, suggesting that the density of states does not become constant near EF.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4860638