All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Dev...

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Bibliographic Details
Published in:Journal of applied physics 2014-01, Vol.115 (3)
Main Authors: Renteria, J, Samnakay, R, Jiang, C, Pope, T R, Goli, P, Yan, Z, Wickramaratne, D, Salguero, T T, Lake, R K
Format: Article
Language:English
Subjects:
Applied physics
Crystal growth
Current voltage characteristics
Logic circuits
Organic chemistry
Single crystals
Switches
Tantalum
Thin films
Titanium
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Summary:We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4862336