Effect of annealing temperature on optical and electrical properties of ZrO2−SnO2 based nanocomposite thin films

Transparent nanocomposite ZrO2−SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the thr...

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Bibliographic Details
Main Authors: Anitha, V S, Sujatha, Lekshmy S, John, Berlin I, Joy, K
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Dip coatings
Electrical properties
Immersion coating
Nanocomposites
Optical properties
Optoelectronic devices
Sol-gel processes
Thin films
Tin dioxide
X ray spectra
X-ray diffraction
Zirconium dioxide
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Summary:Transparent nanocomposite ZrO2−SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2−SnO2 films can be used in many applications and in optoelectronic devices.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4862014