MoC intermediate layer for FePt magnetic recording media

A (001) textured FePt film was deposited on MoC/CrRu/glass at a substrate temperature of 380 °C by using magnetron sputtering. The MoC conductive intermediate layer was used to resist the Cr diffusion up to high deposition temperatures and promotes the epitaxial growth of the (001) textured FePt fil...

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Bibliographic Details
Published in:Journal of applied physics 2014-05, Vol.115 (17)
Main Authors: Tsai, Jai-Lin, Luo, Qi-Shao, Chen, Po-Ran, Chen, Yi-Hsiu
Format: Article
Language:English
Subjects:
Coercivity
Deposition
Diffusion layers
Epitaxial growth
Glass substrates
Hysteresis loops
Interlayers
Intermetallic compounds
Iron compounds
Magnetic recording
Magnetic storage
Magnetic tape
Magnetron sputtering
Platinum compounds
Recording instruments
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Summary:A (001) textured FePt film was deposited on MoC/CrRu/glass at a substrate temperature of 380 °C by using magnetron sputtering. The MoC conductive intermediate layer was used to resist the Cr diffusion up to high deposition temperatures and promotes the epitaxial growth of the (001) textured FePt film. The FePt film showed high perpendicular magnetization and the out-of-plane coercivity increased with MoC thickness. The FePt/MoC (5 nm)/CrRu film showed a square out-of-plane magnetic hysteresis loop with a coercivity of 6.0 kOe and a linear-like in-plane loop. A multi-functional MoC intermediate layer exhibited heteroepitaxial relation with FePt and CrRu and was capable of resisting the interlayer diffusion at high deposition temperatures.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4863376