The x dependent two kinds of resistive switching behaviors in SiOx films with different x component

We discover the transition phenomenon of two kinds of different resistive switching behaviors in SiOx based Pt/SiOx/Pt devices with different x component. When x  0.95, the operations do not need a current compliance and Vreset is higher than Vset. We use the silicon dangling bonds (Si-DBs) percolat...

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Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (1)
Main Authors: Wang, Yuefei, Chen, Kunji, Qian, Xinye, Fang, Zhonghui, Li, Wei, Xu, Jun
Format: Article
Language:English
Subjects:
Applied physics
Electric potential
Percolation
Resistance
Silicon
Switching
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Summary:We discover the transition phenomenon of two kinds of different resistive switching behaviors in SiOx based Pt/SiOx/Pt devices with different x component. When x  0.95, the operations do not need a current compliance and Vreset is higher than Vset. We use the silicon dangling bonds (Si-DBs) percolation model to explain the x dependent transition phenomenon. The microstructural transitions of tetrahedral Si-O configurations and related Si-DBs in as-deposited SiOx films with different x and the hopping conductance of low-resistance-states support our model.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861592