Voltage dependent displacement current as a tool to measure the vacuum level shift caused by self-assembled monolayers on aluminum oxide

We present charge extraction by a linearly increasing voltage measurements on diodes based on an n-channel naphthalenetetracarboxylic acid diimide semiconductor and an aluminum oxide blocking layer. Results show a large displacement current (roughly 15 times that expected from the geometrical capaci...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (24)
Main Authors: Nyman, Mathias, Sandberg, Oskar, Martínez Hardigree, Josué F., Kola, Srinivas, Katz, Howard E., Österbacka, Ronald
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Diimide
Diodes
Displacement
Electric potential
Electrical measurement
Monolayers
Self-assembled monolayers
Self-assembly
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Summary:We present charge extraction by a linearly increasing voltage measurements on diodes based on an n-channel naphthalenetetracarboxylic acid diimide semiconductor and an aluminum oxide blocking layer. Results show a large displacement current (roughly 15 times that expected from the geometrical capacitance), which we associate with trap filling in the oxide. The trap density is calculated to be on the order of 1019 cm−3, in agreement with preceding work. We present a way of using the displacement current as a tool for probing the vacuum level shift caused by modifying the oxide surface with self-assembled monolayers in operating devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4844875