Direct measurement of band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy

We directly and non-destructively measured the valence band offset at the interface between CdS and Cu2ZnSnS4 (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES), which can measure the electron state of the buried interface because of its large analysis depth. These measurements were made us...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (24)
Main Authors: Tajima, Shin, Kataoka, Keita, Takahashi, Naoko, Kimoto, Yasuji, Fukano, Tatsuo, Hasegawa, Masaki, Hazama, Hirofumi
Format: Article
Language:English
Subjects:
Applied physics
Conduction bands
Electrons
Photoelectron spectroscopy
Spectroscopic analysis
Spectrum analysis
Valence band
X ray photoelectron spectroscopy
X ray spectra
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Summary:We directly and non-destructively measured the valence band offset at the interface between CdS and Cu2ZnSnS4 (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES), which can measure the electron state of the buried interface because of its large analysis depth. These measurements were made using the following real devices; CZTS(t = 700 nm), CdS(t = 100 nm)/CZTS(t = 700 nm), and CdS(t = 5 nm)/CZTS(t = 700 nm) films formed on Mo coated glass. The valence band spectra were measured by HAXPES using an X-ray photon energy of 8 keV. The value of the valence band offset at the interface between CdS and CZTS was estimated as 1.0 eV by fitting the spectra. The conduction band offset could be deduced as 0.0 eV from the obtained valence band offset and the band gap energies of CdS and CZTS.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4850235