A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

We consider a new mechanism of current flow in a metal-semiconductor contact that describes the growth of contact resistivity ρc with temperature T. The theory developed allows us to explain our experimental results showing the anomalous increase in the temperature dependence of contact resistivity,...

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Bibliographic Details
Main Authors: Sachenko, A V, Belyaev, A E, Boltovets, N S, Konakova, R V, Kudryk, Ya Ya, Novitskii, S V, Sheremet, V N, Vinogradov, A O, Li J, Vitusevich, S A
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
Dislocation density
Electrical resistivity
Group III-V semiconductors
Silicon compounds
Temperature dependence
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Summary:We consider a new mechanism of current flow in a metal-semiconductor contact that describes the growth of contact resistivity ρc with temperature T. The theory developed allows us to explain our experimental results showing the anomalous increase in the temperature dependence of contact resistivity, ρc(T), as well as results obtained previously in ref. [1-5] on the behavior of ohmic contacts to III-V compounds and Si.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848285