Phase diagram and specific band gap features of novel TlGaSe^sub 2^: Zn^sup +2^(Cd^sup +2^, Hg^sup +2^) crystals

In the present work, we investigate, in detail, the phase diagrams of the TlGaSe2–Zn(Cd,Hg)Se systems, which are quasi-binary and eutectic type. The solid phase solubility on the basis of components did not exceed 5 mol% at 670 K. The crystals of TlGaSe2: Zn+2(Cd+2, Hg+2)) solid solutions were prepa...

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Bibliographic Details
Published in:Journal of alloys and compounds 2018-11, Vol.768, p.667
Main Authors: Makhnovets, G, Myronchuk, G, Piskach, L, Parasyuk, O, Kityk, IV, Piasecki, M
Format: Article
Language:English
Subjects:
Band gap
Bridgman method
Cadmium
Chemical compounds
Crystal growth
Diagrams
Energy gap
Phase diagrams
Selenium
Semiconductors
Solid phases
Solid solutions
Temperature dependence
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Summary:In the present work, we investigate, in detail, the phase diagrams of the TlGaSe2–Zn(Cd,Hg)Se systems, which are quasi-binary and eutectic type. The solid phase solubility on the basis of components did not exceed 5 mol% at 670 K. The crystals of TlGaSe2: Zn+2(Cd+2, Hg+2)) solid solutions were prepared by Bridgman-Stokbarger method. It was established that the doping of Zn+2, Cd+2, Hg+2 leads to a slight decrease in the values of both the direct and indirect band gap energies with respect to the that in undoped TlGaSe2 crystal. The temperature dependence of the band gap values for all the synthesized compounds is crucial for semiconductor applications. Also, the dominant mechanisms are proposed that contribute to the fundamental absorption edge tailing.
ISSN:0925-8388
1873-4669