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Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells
(ZnSe) x (SnSe) 1– x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe) 0.1 (SnSe) 0.9 films are studied...
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Published in: | Applied solar energy 2018-07, Vol.54 (4), p.255-260 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | (ZnSe)
x
(SnSe)
1–
x
films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe)
0.1
(SnSe)
0.9
films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm
–1
. |
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ISSN: | 0003-701X 1934-9424 |
DOI: | 10.3103/S0003701X18040138 |