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Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells

(ZnSe) x (SnSe) 1– x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe) 0.1 (SnSe) 0.9 films are studied...

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Bibliographic Details
Published in:Applied solar energy 2018-07, Vol.54 (4), p.255-260
Main Authors: Razykov, T. M., Ergashev, B. A., Yuldoshov, R. T., Mavlonov, A. A., Kuchkarov, K. M.
Format: Article
Language:English
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Summary:(ZnSe) x (SnSe) 1– x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe) 0.1 (SnSe) 0.9 films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm –1 .
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X18040138