Transfer‐Free, Large‐Scale Growth of High‐Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil

• Published in: Angewandte Chemie 2018-11, Vol.130 (47), p.15600-15604
• Main Authors: Song, Intek, Park, Yohwan, Cho, Hyeyeon, Choi, Hee Cheul
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition; Chemische Dampfabscheidung; Chemistry; Copper; Diffusion layers; Direktes Wachstum; Graphen; Graphene; Isolierende Substrate; Legierungen; Metal foils; Organic chemistry; Quartz; Reaction mechanisms; Sandwich structures; Silicon dioxide; Silicon substrates; Substrates; Thermal decomposition; Vapors
• ISSN: 0044-8249; 1521-3757
• DOI: 10.1002/ange.201805923

High‐quality, large‐area, single‐layer graphene was directly grown on top of a quartz substrate by a low‐pressure chemical vapor deposition (CVD) process using Cu vapor as a catalyst. In this process, continuous generation and supply of highly concentrated Cu vapor is the key to the growth of large‐scale, high‐quality graphene. It was achieved by direct physical contact, or “touch‐down,” of a Cu foil with an underlying sacrificial SiO2/Si substrate, and the target quartz substrate was placed on top of the Cu foil, eventually having a quartz/Cu/SiO2/Si sandwich structure. To establish the reaction mechanism, a test growth was performed without the quartz substrate, which revealed that Cu is diffused through the SiO2 layer of the sacrificial SiO2/Si substrate to form liquid‐phase Cu‐Si alloy that emits massive Cu vapor. This Cu vapor catalyzes thermal decomposition of supplied CH4 gas. Touchdown! Große Flächen aus einlagigem Graphen von hoher Qualität wurden durch direktes Wachstum auf einem Quarzsubstrat nach chemischer Niederdruckdampfabscheidung (CVD) mit Cu‐Dampf als Katalysator erhalten. Der Cu‐Dampf wurde durch direkten physikalischen Kontakt – „Touchdown” – einer Cu‐Folie mit einem SiO2/Si‐Opfersubstrat erzeugt.