6.6% efficient antimony selenide solar cells using grain structure control and an organic contact layer

We report a high efficiency antimony selenide (Sb2Se3) photovoltaic device structure using a new multi-step close space sublimation deposition process incorporating a Sb2Se3 seed layer; key to achieving higher efficiency devices via close space sublimation. Utilizing a glass|FTO|TiO2|Sb2Se3|PCDTBT|A...

Full description

Saved in:
Bibliographic Details
Published in:Solar energy materials and solar cells 2018-12, Vol.188, p.177-181
Main Authors: Hutter, Oliver S., Phillips, Laurie J., Durose, Ken, Major, Jonathan D.
Format: Article
Language:English
Subjects:
Antimony
Antimony compounds
Antimony selenide
Cadmium
Efficiency
Grain
Grain structure
Organic
Organic chemistry
Photovoltaic cells
Photovoltaics
Sb2Se3
Selenide
Selenides
Solar cells
Sublimation
Thin film
Titanium dioxide
Toxicity
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a high efficiency antimony selenide (Sb2Se3) photovoltaic device structure using a new multi-step close space sublimation deposition process incorporating a Sb2Se3 seed layer; key to achieving higher efficiency devices via close space sublimation. Utilizing a glass|FTO|TiO2|Sb2Se3|PCDTBT|Au structure, a peak efficiency of 6.6% was achieved, which is comparable to the current record devices for this material. Crucially, this device avoids toxic lead in the hole transport material, and cadmium in the window layer. Moreover, the addition of the PCDTBT back contact both maintains peak efficiency of 6.6%, and improves the uniformity of performance, increasing the average efficiency from 4.3% to 6.1%. [Display omitted] •6.6% efficient antimony selenide photovoltaic devices.•High efficiency photovoltaic devices without toxic lead or cadmium.•A seed layer is a crucial step for high quality CSS antimony selenide films.•Incorporation of an organic PCDTBT layer improves uniformity of performance.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2018.09.004