Raman spectroscopy of gallium ion irradiated graphene

The successful integration of graphene in future technologies, such as filtration and nanoelectronics, depends on the ability to introduce controlled nanostructured defects in graphene. In this work, Raman spectroscopy is used to investigate the induction of disorder in graphene via gallium ion beam...

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Bibliographic Details
Published in:Diamond and related materials 2018-10, Vol.89, p.163-173
Main Authors: Agius Anastasi, Anthea, Valsesia, Andrea, Colpo, Pascal, Borg, Matthew K., Cassar, Glenn
Format: Article
Language:English
Subjects:
Amorphization
Backscattering
Desalination
Filtration
Gallium
Graphene
Ion bombardment
Irradiation
Nanoelectronics
Nanostructure
Nanostructured materials
Normal distribution
Raman spectroscopy
Silicon dioxide
Silicon substrates
Spectrum analysis
Stability
Substrates
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Summary:The successful integration of graphene in future technologies, such as filtration and nanoelectronics, depends on the ability to introduce controlled nanostructured defects in graphene. In this work, Raman spectroscopy is used to investigate the induction of disorder in graphene via gallium ion beam bombardment. Two configurations of CVD-grown graphene samples are used: (i) graphene supported on a Si/SiO2 substrate, and (ii) graphene suspended on porous TEM grids. It is observed that the supported graphene experiences more damage in response to lower beam doses than suspended graphene. This phenomenon is attributed to the behaviour of the energetic ions impinging the sample. In suspended graphene, the ions pass through the graphene membrane once and disperse to the atmosphere, while in supported graphene, the ions embed themselves in the substrate causing swelling and backscattering events, hence increasing the induced disorder. In supported graphene, the ratio between the Gaussian D and G peaks attributed to amorphous carbon, and the Lorentzian D and G peaks attributed to graphene, (IDG/IDL) and (IGG/IGL), are suggested to be used to quantify the degree of amorphization. The results are relevant to the development of nanostructured graphene-based filtration or desalination membranes, as well as for graphene-based nanoelectronics. [Display omitted] •Ion irradiation causes more damage in supported rather than suspended graphene.•Gaussian to Lorentzian G peak ratio can be used to quantify the degree of disorder.•Higher incidence angles of irradiation increase damage in suspended graphene.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2018.09.011