Characterization of a Low-Cost, Monolithically Integrated, Tunable 10G Transmitter for Wavelength Agile PONs

Dynamically reconfigurable passive optical networks (PONs) using time-division multiplexing and dense wavelength division multiplexing will require low-cost, high-performance customer premises equipment to be economically viable. In particular, substantial cost savings can be achieved through the us...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2018-12, Vol.54 (6), p.1-12
Main Authors: Carey, Daniel, Ramaswamy, Prasanna, Talli, Giuseppe, Antony, Cleitus, Roycroft, Brendan, Corbett, Brian, Townsend, Paul D.
Format: Article
Language:English
Subjects:
Absorptivity
Carrier frequencies
Chirp
Cost control
Dense Wavelength Division Multiplexing
Equipment costs
Fabrication
Fiber optic networks
Low cost
Measurement techniques
Modulation
monolithic integration
On-Off Keying
Optical communication
Optical communications
Optical transmitters
passive optical networks
Quantum wells
Response time
Semiconductor optical amplifiers
Thermal response
time division multiplexing
Transmitters
tunable semiconductor lasers
Tuning
Vertical cavity surface emitting lasers
Waveguide lasers
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Summary:Dynamically reconfigurable passive optical networks (PONs) using time-division multiplexing and dense wavelength division multiplexing will require low-cost, high-performance customer premises equipment to be economically viable. In particular, substantial cost savings can be achieved through the use of efficient re-growth free, foundry-compatible fabrication techniques. Using this strategy, this paper presents the first detailed characterization of a monolithically integrated transmitter comprised of a discretely tunable slotted Fabry-Pérot ridge waveguide laser, an absorptive modulator and a semiconductor optical amplifier (SOA) produced using a standard off-the-shelf AlInGaAs/InP multiple quantum well epitaxial structure. This first generation device demonstrates a discrete single-mode tuning range of approximately 12 nm between 1551nm and 1563 nm with a side-mode suppression ratio ≥30 dB. Moreover, the integrated modulator section is shown to support transmission at 10 Gb/s using non-return to zero on-off keying with an extinction ratio in excess of 8 dB. Furthermore, using a time-resolved chirp measurement technique to examine dynamic deviations in the set carrier frequency, the modulator section exhibits a chirp contribution of
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2018.2874628