Nonlinear transfer of an intense few-cycle terahertz pulse through opaque n -doped Si

Extremely intense few-cycle terahertz pulses exhibit complex nonlinear behavior under interaction with n-doped opaque Si having low field transmission of ∼0.02%. Transmission of a 700-fs pulse with central frequency ∼1.5THz through the Si sample increases up to ∼8% for the external field strength of...

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Bibliographic Details
Published in:Physical review. B 2018-10, Vol.98 (16), p.165206, Article 165206
Main Authors: Chefonov, O. V., Ovchinnikov, A. V., Agranat, M. B., Fortov, V. E., Efimenko, E. S., Stepanov, A. N., Savel'ev, A. B.
Format: Article
Language:English
Subjects:
Field strength
Ionization
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Summary:Extremely intense few-cycle terahertz pulses exhibit complex nonlinear behavior under interaction with n-doped opaque Si having low field transmission of ∼0.02%. Transmission of a 700-fs pulse with central frequency ∼1.5THz through the Si sample increases up to ∼8% for the external field strength of 5 MV/cm and then drops twofold at ∼20MV/cm. Electro-optical sampling measurements revealed formation of a single-cycle terahertz pulse at this field due to generation of a thin ionized layer by the first intense oscillation of the field. We explained the data obtained from the competition of processes of collision electron-phonon rate fast increase and saturation, as well as ionization under action of an intense THz field.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.98.165206