Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC

In this study, we used a Ni/W/Ni-layered structure to provide low-resistive ohmic contacts with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and Ni/Ti/Ni as control groups with specific contact resistivities, and we verified the thermal stability of the structur...

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Bibliographic Details
Published in:Electrical engineering 2018-12, Vol.100 (4), p.2431-2437
Main Authors: Bae, Dongwoo, Ahn, Gilcho, Jeong, Chungbu, Kim, Kwangsoo
Format: Article
Language:English
Subjects:
Contact resistance
Control stability
Economics and Management
Electrical Engineering
Electrical Machines and Networks
Electrical resistivity
Energy Policy
Engineering
Fish
N-type semiconductors
Original Paper
P-type semiconductors
Power Electronics
Stability analysis
Stability tests
Structural stability
Thermal stability
Ultrasonic testing
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Summary:In this study, we used a Ni/W/Ni-layered structure to provide low-resistive ohmic contacts with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and Ni/Ti/Ni as control groups with specific contact resistivities, and we verified the thermal stability of the structures by specific contact resistivity measurements and thermal duration tests. We found that for both n-type and p-type semiconductors, Ni/W/Ni is superior in terms of thermal stability and specific contact resistivity. Using XRD, we also analyzed the components involved in ohmic contact and thermal stability tests.
ISSN:0948-7921
1432-0487
DOI:10.1007/s00202-018-0711-y