Electric-field-controllable nonvolatile multilevel resistance switching of Bi0.93Sb0.07/PMN-0.29PT(111) heterostructures

Electric-field switchable multilevel nonvolatile resistance states are achieved at room temperature in Bi0.93Sb0.07/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(111) (PMN-0.29PT) heterostructures. During the initial poling of the PMN-0.29PT, the variation of the resistance of the Bi0.93Sb0.07 film with the elect...

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Bibliographic Details
Published in:Applied physics letters 2018-11, Vol.113 (22)
Main Authors: Xu, Zhi-Xue, Yan, Jian-Min, Xu, Meng, Guo, Lei, Chen, Ting-Wei, Gao, Guan-Yin, Wang, Yu, Li, Xiao-Guang, Luo, Hao-Su, Zheng, Ren-Kui
Format: Article
Language:English
Subjects:
Applied physics
Coercivity
Deoxidizing
Electric fields
Endurance
Ferroelectric materials
Ferroelectricity
Heterostructures
Induced polarization
Lattice strain
Plane strain
Stability
Substrates
Switching
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Summary:Electric-field switchable multilevel nonvolatile resistance states are achieved at room temperature in Bi0.93Sb0.07/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(111) (PMN-0.29PT) heterostructures. During the initial poling of the PMN-0.29PT, the variation of the resistance of the Bi0.93Sb0.07 film with the electric field tracks the variation of the electric-field-induced in-plane strain of the PMN-0.29PT effectively, revealing that the resistance switching is dominated by the ferroelectric-domain-switching-induced lattice strain but not the domain-switching-induced polarization charges. A relative resistance change ΔR/R ∼ 7% at 300 K and up to ∼10% at 180 K were achieved near the coercive field EC of the PMN-0.29PT(111) substrate. At least five stable resistance states with good endurance properties could be obtained at room temperature by precisely controlling the electric-field pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-0.29PT to the film, providing a simple and energy efficient way to construct multistate resistive memory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5049789