Novel Band-to-Band Tunneling Body Contact (BTBC) Structure to Suppress the Floating- Body Effect in a Vertical-Cell DRAM

A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the...

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Bibliographic Details
Published in:IEEE electron device letters 2018-12, Vol.39 (12), p.1860-1863
Main Authors: Cho, Youngseung, Choi, Pyeongho, Hyeon, Younghwan, Song, Junhwa, Hwang, Yoosang, Choi, Byoungdeog
Format: Article
Language:English
Subjects:
4F
bipolar junction transistor (BJT)
Doping
DRAM chips
Dynamic random access memory
Floating bodies
Floating structures
Leakage currents
Logic gates
memory architecture
Random access memory
Silicon
Transistors
Tunnel diodes
Tunneling
vertical cell array
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Summary:A vertical cell is the best structure for optimizing dynamic random access memory size. However, this structure has a fatal weakness called the floating-body effect (FBE). In this letter, we propose a new vertical structure to suppress FBE and short-channel effects, and successfully demonstrate the structure through simulation. In the new structure, the band-to-band tunnel diode body contact is built in the source region, which effectively releases the accumulated body carriers. In the buried contact, a heavily doped \text{p}^{+} layer is introduced next to the \text{n}^{+} source region, effectively connecting the body and source through tunneling. Furthermore, the proposed structure shows an extremely high ON-state to OFF-state current ( \text{I}_{ON}/\text{I}_{OFF}) ratio of ~10 7 for a channel length of 100 nm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2874303