Single-Event Transient in FinFETs and Nanosheet FETs

A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device shows superior immunity to alpha particles due to the strong gate controllability. The floating nanosheets isolated from the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2018-12, Vol.39 (12), p.1840-1843
Main Authors: Kim, Jungsik, Lee, Jeong-Soo, Han, Jin-Woo, Meyyappan, M.
Format: Article
Language:English
Subjects:
alpha particle
Alpha particles
Alpha rays
Controllability
Decoupling
FinFET
FinFETs
Floating structures
gate-all-around
Immunity
Ionization
linear energy transfer
Logic gates
Nanoscale devices
nanosheet
Nanosheets
radiation
reliability
Semiconductor process modeling
Single event transient (SET)
soft error
Stability
Substrates
TCAD simulation
Transient analysis
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device shows superior immunity to alpha particles due to the strong gate controllability. The floating nanosheets isolated from the bulk substrate and the surrounding gate structure suppress charging due to ionization radiation. The angular irradiation effect is also studied. The impact of the incident angle is less sensitive on the nanosheet FET compared with the FinFET. This is attributed to the fact that the channel is segmented into three stacks with each controlled by the surrounding gate, thereby physically decoupling the transient charges and reducing the SET in the nanosheet FET.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2877882