3 μm InAs quantum well lasers at room temperature on InP

An InP-based metamorphic InAs quantum well laser has been demonstrated on an In0.8Al0.2As template with electrically pumped lasing up to 3 μm at room temperature. The dual-layer upper cladding structure, consisting of In0.8Al0.2As first cladding and Al0.35Ga0.65As second cladding layers, is applied...

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Bibliographic Details
Published in:Applied physics letters 2018-12, Vol.113 (23)
Main Authors: Ji, W. Y., Gu, Y., Zhang, J., Ma, Y. J., Chen, X. Y., Gong, Q., Huang, W. G., Shi, Y. H., He, G. X., Huang, H., Zhang, Y. G.
Format: Article
Language:English
Subjects:
Applied physics
Cladding
Continuous radiation
Indium phosphides
Lasing
Photoluminescence
Quantum well lasers
Room temperature
X-ray diffraction
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Summary:An InP-based metamorphic InAs quantum well laser has been demonstrated on an In0.8Al0.2As template with electrically pumped lasing up to 3 μm at room temperature. The dual-layer upper cladding structure, consisting of In0.8Al0.2As first cladding and Al0.35Ga0.65As second cladding layers, is applied to enhance the electronic and optical confinements. Despite the lattice-mismatched approach, X-ray diffraction and photoluminescence measurements show a moderate material quality of the active region. By using 15-nm-thick type-I quantum wells, the lasing wavelength has been achieved to be 3.06 μm in the pulsed mode at 300 K and 2.93 μm in the continuous-wave mode at 220 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5050175