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A star-shaped carbazole-based hole-transporting material with triphenylamine side arms for perovskite solar cells
Herein, we employ a simple star-shaped hole-transporting material (HTM) consisting of a carbazole core and triphenylamine side arms, termed LD29 , in mesoscopic perovskite solar cells (PSCs). LD29 exhibits a deep HOMO level of −5.24 eV, a high hole mobility of 1.72 × 10 −5 cm 2 V −1 s −1 , and a rel...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (47), p.12912-12918 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Herein, we employ a simple star-shaped hole-transporting material (HTM) consisting of a carbazole core and triphenylamine side arms, termed
LD29
, in mesoscopic perovskite solar cells (PSCs).
LD29
exhibits a deep HOMO level of −5.24 eV, a high hole mobility of 1.72 × 10
−5
cm
2
V
−1
s
−1
, and a relatively high glass-transition temperature of 121 °C, as well as good film-forming ability. PSCs using dopant-free
LD29
as the HTM layer exhibit a maximum efficiency of 14.29%. Promisingly, when
LD29
is doped, a champion efficiency over 18% has been achieved, which is even comparable with that of the conventional doped spiro-OMeTAD. Moreover, the laboratory synthesis cost for
LD29
is significantly lower than that for spiro-OMeTAD. Importantly, the PSC performance does not change greatly with the concentration of
LD29
regardless of whether the dopants are used, which has the potential to further reduce material usage. The device employing
LD29
also shows comparable stability to that employing spiro-OMeTAD. Consequently, our results provide an important step forward for the commercialized application of PSCs.
A cost-effective carbazole-based hole transporting material achieved a power conversion efficiency over 18% for perovskite solar cells. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c8tc04191a |