Reversible manipulation of lattice defects in single-crystal SnO2 microrod by applying mechanical stress and voltage

We report a reversible transition between semiconducting and insulating states in a single-crystal SnO2 microrod device through creation and healing of lattice defects by applying mechanical stress and voltage. The process of creating lattice defects by using mechanical stress is investigated using...

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Bibliographic Details
Published in:Journal of applied physics 2019-02, Vol.125 (8)
Main Authors: Sakurai, Makoto, Liu, Kewei, Aono, Masakazu
Format: Article
Language:English
Subjects:
Applied physics
Crystal defects
Crystal lattices
Defects
Dynamic response
Electric potential
Healing
Innovations
Ohmic dissipation
Photoluminescence
Potential barriers
Resistance heating
Single crystals
Slip planes
Tin dioxide
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Summary:We report a reversible transition between semiconducting and insulating states in a single-crystal SnO2 microrod device through creation and healing of lattice defects by applying mechanical stress and voltage. The process of creating lattice defects by using mechanical stress is investigated using transmission electron microscope and photoluminescence observations. The results reveal the presence of slip planes and non-volatile lattice defects. The healing process is analyzed through the dynamic response of the current to the pulse voltage applied to the ends of the microrod. It is found that there are fast and slow healing processes. The fast process is due to field-induced reduction of the trapping potential barrier, and the slow one is due to Joule heating. The reversible and nonlinear nature of the defect manipulation will open new avenues of innovation different from those of conventional technology, especially for the mechanical design of touch interfaces.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5053837