Synthesis of nano porous silicon heterostructures for optoelectronic applications

In this manuscript, the nano and micro porous silicon was prepared using the electrochemical etching method. Different current density was employed in this report ranged from 20 mA/cm2 to 60 mA/cm2 to investigate its effects on the optical (PL) and structural (Optical Microscope) properties. The pho...

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Bibliographic Details
Main Authors: Fakhri, Makram A., Rashid, Basam G., Numan, Najwan H., Bader, Ban A., Khalid, Farah G., Zaker, Thoalfiqar A., Salim, Evan T.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Electrochemical etching
Heterostructures
Morphology
Optical properties
Optoelectronics
Photoluminescence
Porous silicon
Silicon
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Summary:In this manuscript, the nano and micro porous silicon was prepared using the electrochemical etching method. Different current density was employed in this report ranged from 20 mA/cm2 to 60 mA/cm2 to investigate its effects on the optical (PL) and structural (Optical Microscope) properties. The photoluminescence (Pl) spectrum for prepared samples was investigated and proved the optimum current density are in the 60 mA/cm2, also the optical microscope as a morphological result was present and shows the optimum morphological condition in 60 mA/cm2.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5080829