Effect of non-square structure potential on the multisubband electron mobility in double quantum well structure

We study the impact of non-square potential well structure on the electron mobility μ of double quantum well (DQW) based field effect transistors carved out of the AlxGa1-xAs alloy. The barriers lying towards the substrate and surface sides of the DQW are delta doped with Si. We consider DQWs having...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2018-09, Vol.545, p.62-68
Main Authors: Palo, Sangeeta K., Sahu, Trinath, Panda, A.K.
Format: Article
Language:English
Subjects:
AlxGa1-xAs based non-square quantum wells
Double quantum well structures
Double subband electron mobility
Electron density
Electron mobility
Electronics
Electrons
Field effect transistors
Quantum physics
Quantum well field effect transistor
Quantum wells
Scattering
Semiconductor devices
Substrates
Transistors
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Summary:We study the impact of non-square potential well structure on the electron mobility μ of double quantum well (DQW) based field effect transistors carved out of the AlxGa1-xAs alloy. The barriers lying towards the substrate and surface sides of the DQW are delta doped with Si. We consider DQWs having V-shaped (VDQW), parabolic (PDQW), cubic (CDQW) and square (SDQW) potential wells to obtain the low temperature double subband electron mobility μ. We consider ionized impurity (Imp-) and alloy disorder (Al-) scatterings to calculate μ as a function of well width w and surface electron density NS. We show that the changes in the structure potentials influence the interplay of intersubband effects on the scattering mechanisms differently causing μ(VDQW) 
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2018.05.043