p-Diamond as candidate for plasmonic terahertz and far infrared applications

High values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show...

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Bibliographic Details
Published in:Applied physics letters 2018-12, Vol.113 (25)
Main Authors: Shur, Michael, Rudin, Sergey, Rupper, Greg, Ivanov, Tony
Format: Article
Language:English
Subjects:
Applied physics
Contact resistance
Diamonds
Field effect transistors
High temperature
Hole mobility
Semiconductor devices
Transistors
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Summary:High values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show that p-diamond sub-THz transistors are viable contenders, especially for applications in the 200 to 600 GHz atmospheric window which are of special interest for the beyond 5 G sub-THz communications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5053091