Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor

A tungsten trioxide (WO 3 ) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO 3 film (~10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH 3...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-01, Vol.66 (1), p.696-701
Main Authors: Chou, Tzu-Chieh, Chang, Ching-Hong, Lee, Cheng, Liu, Wen-Chau
Format: Article
Language:English
Subjects:
Ammonia
Detection
detection level
Gases
Operating temperature
Radio frequency
semiconducting metal oxide (SMO)
sensing response
Sensors
Sputtering
Temperature measurement
Temperature sensors
Thin films
Tungsten
Tungsten oxides
tungsten trioxide (WO₃)
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Summary:A tungsten trioxide (WO 3 ) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO 3 film (~10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH 3 /air, 250 °C), an extremely low detection level (≤10-ppb NH 3 /air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO 3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2882737