Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition

The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (X...

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Bibliographic Details
Published in:Optical materials express 2018-10, Vol.8 (10), p.3184
Main Authors: Tian, M., Qian, Y. D., Zhang, C., Li, L., Yao, S. D., Ferguson, I. T., Talwar, D. N., Zhai, J. Y., Meng, D. H., He, K. Y., Wan, L. Y., Feng, Z. C.
Format: Article
Language:English
Subjects:
Backscattering
Chemical vapor deposition
Composition
Diffusion
Emission analysis
Emission spectra
Heterostructures
Indium
Indium gallium nitrides
Metalorganic chemical vapor deposition
Optical properties
Organic chemicals
Organic chemistry
Photoelectrons
Photoluminescence
Raman spectra
Spectrum analysis
Substrates
X ray photoelectron spectroscopy
X-ray diffraction
Zinc oxide
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Summary:The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman scattering spectroscopy (RSS). The In composition is evaluated by analyzing the RBS and PL emission spectra. The XPS measurements revealed the diffusion of Zn atoms from the substrate into InGaN films. All the analyses of experimental measurements have shown that the growth temperature played an important role in indium composition as well as of film quality. An optimum growth temperature is a necessary condition for obtaining high-quality films.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.8.003184