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Good thermal stability, giant permittivity, and low dielectric loss for X9R‐type (Ag1/4Nb3/4)0.005Ti0.995O2 ceramics
With the intense demand of the developing microelectronics market, the study of giant permittivity dielectric materials is being promoted. However, it is difficult to obtain suitable dielectric materials for such applications, especially due to high dielectric loss at low frequencies. In this work,...
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Published in: | Journal of the American Ceramic Society 2019-03, Vol.102 (3), p.970-975 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | With the intense demand of the developing microelectronics market, the study of giant permittivity dielectric materials is being promoted. However, it is difficult to obtain suitable dielectric materials for such applications, especially due to high dielectric loss at low frequencies. In this work, Ag+Nb codoped TiO2 ceramics were designed and fabricated in a conventional solid reaction by sintering at 1290‐1340°C for 5‐10 hours. The issue of how the microstructure and dielectric properties of (Ag1/4Nb3/4)0.005Ti0.995O2 ceramics are affected by the sintering conditions was discussed. By optimizing sintering conditions, a dense microstructure, a high dielectric constant (εr ≈ 9410), and a low dielectric loss (tanδ ≈ 0.037) at 1 kHz were achieved. Most importantly, the temperature coefficient value of εr at different frequencies remained stable between −14.3% and 13.7% within the temperature range from −190 to 200°C, which has potential applications in X9R capacitor. |
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ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/jace.16169 |