An ultrasensitive spintronic strain‐gauge sensor and a spin‐MEMS microphone

This review provides the spintronic strain‐gauge sensor (Spin‐SGS) based on a magnetic tunnel junction (MTJ) with a high gauge factor in excess of 5000, which was realized by adopting a novel amorphous Fe‐B‐based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance...

Full description

Saved in:
Bibliographic Details
Published in:Electronics and communications in Japan 2019-02, Vol.102 (2), p.48-54
Main Authors: Fuji, Yoshihiko, Hara, Michiko, Higashi, Yoshihiro, Kaji, Shiori, Masunishi, Kei, Nagata, Tomohiko, Yuzawa, Akiko, Otsu, Kenji, Okamoto, Kazuaki, Baba, Shotaro, Ono, Tomio, Hori, Akio, Fukuzawa, Hideaki
Format: Article
Language:English
Subjects:
Coercivity
gauge factor
Magnetoresistance
Magnetoresistivity
Magnetostriction
Microelectromechanical systems
Micromachining
microphone
MTJ
Noise levels
spintronics
strain gauge
Strain gauges
Tunnel junctions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This review provides the spintronic strain‐gauge sensor (Spin‐SGS) based on a magnetic tunnel junction (MTJ) with a high gauge factor in excess of 5000, which was realized by adopting a novel amorphous Fe‐B‐based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg‐O barrier MTJ. This review also provides a demonstration of novel “Spintronic MEMS (Spin‐MEMS) microphone,” in which a series of Spin‐SGSs are integrated onto a bulk micromachined diaphragm. The Spin‐MEMS microphone exhibits a signal‐to‐noise ratio (SNR) of 57 dB(A) due to the high strain sensitivity of the Spin‐SGSs.
ISSN:1942-9533
1942-9541
DOI:10.1002/ecj.12138