Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator

• Published in: arXiv.org 2019-01
• Main Authors: Wang, Fei, Xiao, Di, Yuan, Wei, Jiang, Jue, Yi-Fan, Zhao, Zhang, Ling, Yao, Yunyan, Dong, Baojuan, Liu, Wei, Zhang, Zhidong, Liu, Chaoxing, Shi, Jing, Han, Wei, Chan, Moses H W, Samarth, Nitin, Cui-Zu, Chang
• Format: Article
• Language: English
• Subjects: Antiferromagnetism; Chromium oxides; Coupling; Crossovers; Curie temperature; Electronic devices; Exchanging; Heterostructures; Magnetic moments; Magnetism; Microscopes; Power consumption; Quantum phenomena
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1901.02905

Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena towards technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 layer and found that the magnetic moments of the magnetic TI layer and the surface spins of the Cr2O3 layers favor interfacial AFM coupling. Field cooling studies show a crossover from negative to positive exchange bias clarifying the competition between the interfacial AFM coupling energy and the Zeeman energy in the AFM insulator layer. The interfacial exchange coupling also enhances the Curie temperature of the magnetic TI layer. The unique interfacial AFM alignment in magnetic TI on AFM insulator heterostructures opens a new route toward manipulating the interplay between topological states and magnetic orders in spin-engineered heterostructures, facilitating the exploration of proof-of-concept TI-based spintronic and electronic devices with multi-functionality and low power consumption.