Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)

A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using di...

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Bibliographic Details
Published in:IEEE electron device letters 2019-01, Vol.40 (1), p.44-47
Main Authors: Fernandez, Eduardo F., Seoane, Natalia, Almonacid, Florencia, Garcia-Loureiro, Antonio J.
Format: Article
Language:English
Subjects:
Computer architecture
concentrator photovoltaics
Concentrators
Gallium arsenide
gallium arsenide (GaAs)
Junctions
Microprocessors
P-n junctions
Photonic band gap
Photovoltaic cells
Preliminary designs
series resistance
Solar cells
Sun
tunnel diode
Tunnel diodes
Vertical solar cells
Viability
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Summary:A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary design.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2880240