Large Grain Ruthenium for Alternative Interconnects

We demonstrate Ru wires with more than 4.6\times larger grain sizes, with over 30% reduction in resistivity at highly scaled wire areas down to 68 nm 2 , compared with conventional damascene Ru wires. A method of transferring the extraordinarily large grain structures from thick Ru films to wires...

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Bibliographic Details
Published in:IEEE electron device letters 2019-01, Vol.40 (1), p.91-94
Main Authors: Yoon, Seong Jun, Lee, Sangjae, Lee, Tae In, Yoon, Alexander, Cho, Byung Jin
Format: Article
Language:English
Subjects:
alternative metals
Annealing
Conductivity
Electrical resistivity
etch-back
Grain size
Interconnects
Metals
Ruthenium
Scattering
subtractive etch
Thick films
Wires
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Summary:We demonstrate Ru wires with more than 4.6\times larger grain sizes, with over 30% reduction in resistivity at highly scaled wire areas down to 68 nm 2 , compared with conventional damascene Ru wires. A method of transferring the extraordinarily large grain structures from thick Ru films to wires is presented. Suppressed grain-boundary scattering in the Ru wires is attributed to the low resistivity, which is analyzed using semi-classical resistivity model. The results strongly support Ru as a candidate alternative interconnect material to replace Cu.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2879932