Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC

The increase in threading dislocation during the initial stage of physical vapor transport growth of n-type 4H-SiC crystals was evaluated by cross-sectional X-ray topography. Crystals were grown under two different temperature conditions. A significant increase in threading dislocation was observed...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.65501
Main Authors: Suo, Hiromasa, Tsukimoto, Susumu, Eto, Kazuma, Osawa, Hiroshi, Kato, Tomohisa, Okumura, Hajime
Format: Article
Language:English
Subjects:
Crystal growth
Electron backscatter diffraction
Ions
Secondary ion mass spectrometry
Strain distribution
Stress concentration
Thermal stress
Threading dislocations
Transport
X ray topography
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Summary:The increase in threading dislocation during the initial stage of physical vapor transport growth of n-type 4H-SiC crystals was evaluated by cross-sectional X-ray topography. Crystals were grown under two different temperature conditions. A significant increase in threading dislocation was observed in crystals grown at a high, not low, temperature. The local strain distribution in the vicinity of the grown/seed crystal interface was evaluated using the electron backscatter diffraction technique. The local nitrogen concentration distribution was also evaluated by time-of-flight secondary ion mass spectrometry. We discuss the relationship between the increase in threading dislocation and the local strain due to thermal stress and nitrogen concentration.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.065501