Demonstration of zero bias responsivity in MBE grown β-Ga^sub 2^O^sub 3^ lateral deep-UV photodetector

We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga2O3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm−2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga2O3 films on sapphire. The device exhibited a spectral responsivity of 1...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.060313
Main Authors: Pratiyush, Anamika Singh, Krishnamoorthy, Sriram, Kumar, Sandeep, Xia, Zhanbo, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N
Format: Article
Language:English
Subjects:
Bias
Dark current
Focal plane devices
Gallium oxides
Linearity
Sapphire
Thick films
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Summary:We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga2O3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm−2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga2O3 films on sapphire. The device exhibited a spectral responsivity of 1.4 mA W−1 at 255 nm under zero-bias condition, dark current
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.060313