Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

We demonstrated the effectiveness of photoluminescence (PL) measurement at liquid N temperature after electron irradiation for the determination of the C concentration in P-doped n-type Czochralski-grown Si crystals. The disappearance of P-related lines simplifies the spectral analysis at 77 K, enab...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-08, Vol.57 (8S3), p.8
Main Authors: Ishikawa, Yoichiro, Tajima, Michio, Kiuchi, Hirotatsu, Ogura, Atsushi, Miyamura, Yoshiji, Harada, Hirofumi, Kakimoto, Koichi
Format: Article
Language:English
Subjects:
Crystal growth
Electron irradiation
Line spectra
Photoluminescence
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Summary:We demonstrated the effectiveness of photoluminescence (PL) measurement at liquid N temperature after electron irradiation for the determination of the C concentration in P-doped n-type Czochralski-grown Si crystals. The disappearance of P-related lines simplifies the spectral analysis at 77 K, enabling us to estimate the C concentration from the G-line intensity ratio regardless of the difference in P concentration. The C concentration estimated by PL measurement at 77 K was in good agreement with those by measurement PL at 4.2 K and IR absorption. Unsusceptibility to the concentration of dopant impurities is a practical advantage of the PL measurement at 77 K over that at 4.2 K.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.08RB06